DocumentCode
533938
Title
Interference effects in double-barrier structures in high frequency electric fields
Author
Golant, E.I. ; Kapralova, A.A. ; Lukashin, V.M. ; Pashkovskii, A.B.
Author_Institution
R&PC Istok, Fed. State Unitary Corp., Fryazino, Russia
fYear
2010
fDate
13-17 Sept. 2010
Firstpage
884
Lastpage
885
Abstract
For asymmetric double-barrier resonant-tunneling structures with thin and high (delta) barriers, the dependences of the widths of resonance levels on amplitude of intensive high frequency electric field and peculiarities of electron transport near centers of the resonance levels have been investigated. It has been observed that the non-resonance scattering channel might be absolutely transparent and level widths might substantially exceed their low-signal values.
Keywords
resonant tunnelling; asymmetric double-barrier resonant-tunneling structures; electron transport; high barriers; intensive high frequency electric field amplitude; interference effects; low-signal values; nonresonance scattering channel; resonance level widths; thin barriers; Electric fields; Electronic mail; Interference; Resonant frequency; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-7184-3
Type
conf
DOI
10.1109/CRMICO.2010.5632740
Filename
5632740
Link To Document