Epitaxial growth of column-like nanostructures InGaN on Si in poromeric anodic alumina

Author

Gorokh, G. ; Osinsky, V. ; Solovey, D. ; Labunov, V. ; Mazunov, D. ; Sakharuk, V.

Author_Institution

Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus

fYear

2010

fDate

13-17 Sept. 2010

Firstpage

789

Lastpage

792

Abstract

Method of formation of regular PAA without a barrier layer in the process of anodizing of Al-film on n-type Si has been developed. Semiconductor InGaN-structures were selectively grown in modified PAA-template by MO VPE. Formed self-organized nanostructures InGaN have nonpolar crystallographic α-orientation. Investigations of luminescent properties and analysis of the spectral characteristics have been performed.

Keywords

III-V semiconductors; MOCVD; alumina; anodisation; gallium compounds; indium compounds; luminescence; nanofabrication; nanostructured materials; self-assembly; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; Al-film anodization; InGaN; MOVPE; Si; column-like nanostructures; epitaxial growth; luminescent properties; modified PAA-template; n-type Si; nonpolar crystallographic α-orientation; poromeric anodic alumina; regular PAA formation; selective growth; self-organized nanostructures; semiconductor InGaN-structures; spectral characteristics; Crystals; Electronic mail; Films; Gallium nitride; Nanostructures; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-1-4244-7184-3

Type

conf

DOI

10.1109/CRMICO.2010.5632749

Filename

5632749