Title :
Nitride gallium high power integrated heterostructure FETs
Author :
Rakov, Yu.N. ; Monchares, N.V. ; Bobrova, T.P. ; Schepina, L.V. ; Uzelmann, G.F. ; Mjakishev, Yu.B. ; Bondareva, T.K. ; Zazulnikov, A.F. ; Sveshnikov, Yu.N.
Author_Institution :
Joint Stock Co. Oktava, Novosibirsk, Russia
Abstract :
The heterostructures AlGaN/AlN/GaN, grown on sapphire substrates, the standard design of the integrated power HFET and the design with the additional field-plate, and its technology have been developed. The HFETs have given output power 4,5-5,5 and 3-4 W/mm, and power gain 4,5-7,5 N 3,8-6,0 dB at frequencies 12 and 17,5 GHz.
Keywords :
nitrogen compounds; power HEMT; sapphire; substrates; AlGaN-AlN-GaN; additional field-plate; frequency 12 GHz to 17.5 GHz; heterostructures; integrated power HFET; nitride gallium high power integrated heterostructure FET; power gain; sapphire substrates; Aluminum gallium nitride; Gain; Gallium nitride; HEMTs; Logic gates; MODFETs; Substrates;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632774
