DocumentCode :
533980
Title :
Influence of gamma-irradiation on elements of submicron CMOS integrated circuits
Author :
Korshunov, F.P. ; Bogatyrev, Y.V. ; Belous, A.I. ; Shwedov, S.V. ; Malyshev, V.S. ; Lastovsky, S.B. ; Karas, V.I. ; Kulgachev, V.I.
Author_Institution :
Sci.-Practical Mater. Res. Centre, NAS of Belarus, Minsk, Belarus
fYear :
2010
fDate :
13-17 Sept. 2010
Firstpage :
926
Lastpage :
927
Abstract :
The results of experimental researches of radiation resistance of element base of 0.35 μm CMOS integrated circuits at influence of gamma-irradiation Co60 are submitted.
Keywords :
CMOS integrated circuits; gamma-rays; radiation effects; gamma irradiation; gamma-irradiation; radiation resistance; size 0.35 mum; submicron CMOS integrated circuits; CMOS integrated circuits; Correlation; Leakage current; MOSFET circuits; Materials; Radiation effects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
Type :
conf
DOI :
10.1109/CRMICO.2010.5632789
Filename :
5632789
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=533980
بازگشت