Title :
A wideband 700–1000 MHz short-pulse SiC 300W power amplifier
Author :
Baranov, V.V. ; Kishchinsky, A.A. ; Matveev, A.D. ; Polyakov, G.B.
Author_Institution :
Microwave Syst. JSC, Moscow, Russia
Abstract :
Results of design and experimental investigation of 700-1000 MHz SiC short-pulsed amplifier with output power upper 300W are presented in this article.
Keywords :
UHF power amplifiers; silicon compounds; wide band gap semiconductors; wideband amplifiers; SiC; frequency 70 MHz to 1000 MHz; power 300 W; wideband short-pulse power amplifier; Microwave circuits; Modulation; Power amplifiers; Radio frequency; Silicon carbide; Transistors; Wideband;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632817
