Title :
Influence of GaN surface morphology on characteristics of Al0,3Ga0,7N/GaN heterostructures created by molecular beam epitaxy
Author :
Tsarik, K.A. ; Nevolin, V.K.
Author_Institution :
Moscow Inst. of Electron. Technol. (Tech. Univ.), Moscow, Russia
Abstract :
The technique of forming III-N layers with low defects level is developed. It is based on method of molecular beam epitaxy with atomic force microscopy using. It is demonstrated that the structure perfection of layers, which is estimated by the surface defects number, is directly connected with two-dimensional electron gas (2DEG) characteristics in formed heterostructures.
Keywords :
III-V semiconductors; aluminium compounds; atomic force microscopy; gallium compounds; molecular beam epitaxial growth; semiconductor growth; surface morphology; two-dimensional electron gas; wide band gap semiconductors; 2DEG characteristics; Al0.3Ga0.7N-GaN; Al0.3Ga0.7N-GaN heterostructure characteristics; GaN surface morphology; III-N layer formation; atomic force microscopy; low defects level; molecular beam epitaxy; structure layer perfection; surface defects number; two-dimensional electron gas; Aluminum gallium nitride; Gallium; Gallium nitride; Molecular beam epitaxial growth; Rough surfaces; Surface morphology; Surface roughness;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632850
