Title :
Simulating of double-channel heterotransistor with quantum dots
Author :
Timofeyev, V.I. ; Faleyeva, E.M.
Author_Institution :
Nat. Tech. Univ. of Ukraine "KPI", Kiev, Ukraine
Abstract :
A heterostructure transistor with quantum dots (QD) is a perspective device due to its increase of electrons´ drift velocity in the channel. In this work simulation results of doublechannel heterotransistor with QD are present. QD application causes significant drain current increasing.
Keywords :
quantum dots; transistors; double-channel heterotransistor; doublechannel heterotransistor; drift velocity; heterostructure transistor; quantum dots; Electric fields; Electric potential; Gallium nitride; Heterojunctions; Mobile communication; Quantum dots; Transistors;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632881
