DocumentCode
534067
Title
Simulation of single-electron semiconductor devices with calculation of various factors
Author
Abramov, I.I. ; Baranoff, A.L. ; Shcherbakova, I.Y.
Author_Institution
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear
2010
fDate
13-17 Sept. 2010
Firstpage
863
Lastpage
864
Abstract
The influence of various factors on the results of calculation of IV-characteristics of the single-electron semiconductor devices is investigated with the use of the physical model.
Keywords
semiconductor devices; simulation; single electron devices; IV-characteristics; simulation; single-electron semiconductor devices; Electron devices; Electronic mail; Informatics; Materials; Physics; Quantization; Simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-7184-3
Type
conf
DOI
10.1109/CRMICO.2010.5632927
Filename
5632927
Link To Document