DocumentCode :
534067
Title :
Simulation of single-electron semiconductor devices with calculation of various factors
Author :
Abramov, I.I. ; Baranoff, A.L. ; Shcherbakova, I.Y.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear :
2010
fDate :
13-17 Sept. 2010
Firstpage :
863
Lastpage :
864
Abstract :
The influence of various factors on the results of calculation of IV-characteristics of the single-electron semiconductor devices is investigated with the use of the physical model.
Keywords :
semiconductor devices; simulation; single electron devices; IV-characteristics; simulation; single-electron semiconductor devices; Electron devices; Electronic mail; Informatics; Materials; Physics; Quantization; Simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
Type :
conf
DOI :
10.1109/CRMICO.2010.5632927
Filename :
5632927
Link To Document :
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