Title :
Account of surface charge and scattering in two-band model of RTD
Author :
Abramov, I.I. ; Goncharenko, I.A. ; Kolomejtseva, N.V.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
The influence of the surface charge and scattering on epy electrical characteristics of RTD based on GaAs/AlAs was investigated with the use of combined two-band model. Sufficient agreement of the results with the experimental data was obtained.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; resonant tunnelling diodes; surface charging; surface scattering; GaAs-AlAs; RTD; combined two-band model; epy electrical characteristics; surface charge; surface scattering; Gallium arsenide; Mathematical model; Nanoscale devices; Numerical models; Optical scattering; Optical surface waves;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632942
