Title :
Simulation memory cell based on tunnel magnetoresistance effect
Author :
Kostrov, I.A. ; Stempitsky, R.V.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
The design of the spin memory cell on tunnel magnetoresistance effect in a magnetic tunnel junction is presented. The dynamic behavioral model and spice-macromodel of a spin memory cell are developed for using in computer simulation systems. The simulation results in static and dynamic modes have shown acceptable accuracy and adequacy of the models in comparison with the experiment.
Keywords :
magnetoelectronics; semiconductor storage; tunnelling magnetoresistance; computer simulation systems; magnetic tunnel junction; spin memory cell; tunnel magnetoresistance effect; Hardware design languages; Integrated circuit modeling; Magnetic hysteresis; Magnetic tunneling; Magnetoresistance; Mathematical model; Solid modeling;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632956
