• DocumentCode
    534093
  • Title

    Electron drift velocity in PHEMT

  • Author

    Ayzenshtat, G.I. ; Bozhkov, V.G. ; Yushchenko, A.Y.

  • Author_Institution
    Res. Inst. of Semicond. Devices, Tomsk, Russia
  • fYear
    2010
  • fDate
    13-17 Sept. 2010
  • Firstpage
    125
  • Lastpage
    126
  • Abstract
    The temperature dependence of drift velocity-field characteristics of two-dimensional electron gas in AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor is determined. The saturation drift velocity in AlGaAs/InGaAs quantum well reduces from 1.55·107 to 1.3·107 cm/sec in a temperature range from 200 to 400K.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor quantum wells; two-dimensional electron gas; AlGaAs-InGaAs; PHEMT; drift velocity-field characteristics; electron drift velocity; pseudomorphic high electron mobility transistor; quantum well; saturation drift velocity; temperature 200 K to 400 K; temperature dependence; two-dimensional electron gas; Electron mobility; Electronic mail; Gallium arsenide; Indium gallium arsenide; PHEMTs; Temperature dependence; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-7184-3
  • Type

    conf

  • DOI
    10.1109/CRMICO.2010.5632957
  • Filename
    5632957
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=534093