• DocumentCode
    534097
  • Title

    Electrophysical and mechanical characteristics of metal — Nanostructured p-Si contacts with Schottky barrier

  • Author

    Smyntyna, A.V. ; Kulinich, A.O. ; Yatsunskiy, R.I. ; Marchuk, A.I.

  • Author_Institution
    Odessa Nat. I. I. Mechnikov Univ., Odessa, Ukraine
  • fYear
    2010
  • fDate
    13-17 Sept. 2010
  • Firstpage
    815
  • Lastpage
    816
  • Abstract
    Current-voltage characteristics of metal-nanostructured p silicon structure, which was received by the chemical machining in etchant Si layers superficial at SiO2-Si structures, are investigated in the present work. It is established that current depends on electrical voltage according to I~U2. It confirms the injection character of these currents. Reverse current is influenced on by properties of potential Schottky barrier.
  • Keywords
    Schottky barriers; electrical contacts; etching; silicon; silicon compounds; Schottky barrier; SiO2-Si; chemical machining; current-voltage characteristics; electrophysical characteristics; etchant Si layers; mechanical characteristics; metal-nanostructured p silicon structure; metal-nanostructured p-Si contacts; reverse current; Current-voltage characteristics; Electric potential; Electronic mail; Schottky barriers; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-7184-3
  • Type

    conf

  • DOI
    10.1109/CRMICO.2010.5632962
  • Filename
    5632962
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=534097