DocumentCode :
534104
Title :
High power intra-coupled transistor of R&PC «Istok»
Author :
Manchenko, L.V. ; Pchelin, V.A. ; Tregubov, V.B.
Author_Institution :
R&PC Istok, Fed. State Unitary Corp., Fryazino, Russia
fYear :
2010
fDate :
13-17 Sept. 2010
Firstpage :
127
Lastpage :
128
Abstract :
The intra-matched transistor of 3 cm wavelength with output power higher than 10 W, associated gain higher than 13 dB and efficiency more than 30 % has been developed. The transistor is designed for continuous and pulse operation. Experimental results for 30 intra-coupled transistors are demonstrated.
Keywords :
microwave transistors; R&PC Istok; continuous operation; high power intracoupled transistor; intramatched transistor; pulse operation; wavelength 3 cm; Crystals; Electronic mail; Gain; Gallium arsenide; Power amplifiers; Power generation; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
Type :
conf
DOI :
10.1109/CRMICO.2010.5632969
Filename :
5632969
Link To Document :
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