Title :
GaAs pHEMT MMIC of the ultra broadband amplifier
Author :
Barov, A.A. ; Kondratenko, A.V.
Author_Institution :
MICRAN Co., Tomsk, Russia
Abstract :
There is an example of ultra broadband amplifier MMIC design based on GaAs pHEMT process. Operating frequency band is 1-4 GHz, gain is 18 dB, noise factor is lesser 2.6 dB, input/output reflection factor is less - 15 dB, unipolar power is + 5 V, consumption current is 50 mA, chip dimension is 2.5 × 1.5 × 0.1 mm.
Keywords :
MMIC; wideband amplifiers; GaAs; chip dimension; consumption current; input/output reflection factor; monolithic microwave integrated circuits; noise factor; operating frequency band; pHEMT MMIC; pHEMT process; ultra broadband amplifier MMIC design; unipolar power; Broadband amplifiers; Capacitors; Gallium arsenide; Logic gates; MESFETs; MMICs; PHEMTs;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632975
