Title :
A L-S-band low-noise 1W GaN amplifier
Author :
Kishchinsky, A. ; Markinov, E.
Author_Institution :
Microwave Syst. JSC, Moscow, Russia
Abstract :
The present paper concerns comparison of 1-9 GHz noise characteristics of commercial available power GaAs-based transistors and GaN-based devices. Results of design and experimental investigation of high dymanic range 0.8-2.7 GHz GaN-based LNA are also presented in this article.
Keywords :
gallium arsenide; low noise amplifiers; microwave power transistors; GaAs; GaN; L-S-band low-noise; frequency 0.8 GHz to 2.7 GHz; frequency 1 GHz to 9 GHz; low noise amplifier; noise characteristics; power 1 W; power transistor; Gain; Gallium arsenide; Gallium nitride; Noise; PHEMTs;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632977
