DocumentCode
534121
Title
On using of a stop-layer for thermal conduction increasing in devices based on GaAs
Author
Galdetskiy, A.V. ; Vorobiev, A.A.
Author_Institution
FSUE Istok, Fryazino, Russia
fYear
2010
fDate
13-17 Sept. 2010
Firstpage
756
Lastpage
756
Abstract
A design of an active device on GaAs with a stop-layer under an active structure is proposed. It makes possible to implement effective heat removing through the filled well from the wafer bottom. Simulation has shown doubling of thermal conductance.
Keywords
III-V semiconductors; gallium arsenide; heat conduction; microwave devices; GaAs; active device; active structure; stop-layer; thermal conduction; Electronic mail; Facsimile; Gallium arsenide; Gallium nitride; HEMTs; Heating; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-7184-3
Type
conf
DOI
10.1109/CRMICO.2010.5632987
Filename
5632987
Link To Document