Title :
Production of 150 NM T-gate on basis of Ti/Mo/Cu for p-HEMT
Author :
Anichenko, E.V. ; Erofeev, E.V. ; Ishutkin, S.V. ; Kagadei, V.A. ; Nosaeva, K.S.
Author_Institution :
Res. & Production Co. Micran, Tomsk, Russia
Abstract :
Technology of manufacturing of 0,15 μm T-gate Ti/Mo/Cu on heterostructure GaAs/AlGaAs/InGaAs using the electron-beam lithography in the tri-layer resist mask 950PMMA/ LOR 5B/ 495PMMA is described in the work.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; GaAs-AlGaAs-InGaAs; T-gate; electron-beam lithography; heterostructure GaAs/AlGaAs/InGaAs; p-HEMT; trilayer resist mask; Copper; Gallium arsenide; Lithography; Logic gates; PHEMTs; Production; Resists;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632990
