Title :
Optimization of Specific on-Resistance of Semisuperjunction Trench MOSFETs with Charge Balance
Author :
Haimeng Huang ; Xingbi Chen
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
Analytical models of the 2-D electric field distributions of the interdigitated balanced symmetric semisuperjunction (SemiSJ) structure, based on the charge superposition method, are derived. An accurate approximation of the exact analytical solution of the vertical electric field is also proposed and demonstrated by device simulation. The optimization method and its numerical calculation results of the specific on-resistance of the SemiSJ trench MOSFETs with constant aspect ratio (AR) are presented and verified by simulations. The calculation results show that the optimized specific on-resistance of SemiSJ trench MOSFETs can be reduced by more than 12% with AR equaling three, as compared with that of superjunction trench MOSFETs. The effect of charge imbalance on the breakdown voltage (BV) is also investigated. It is found that the maximum BV is achieved at high-Qp condition rather than at charge-balance condition.
Keywords :
MOSFET; numerical analysis; optimisation; 2D electric field distributions; SemiSJ trench MOSFET; breakdown voltage; charge balance condition; charge imbalance; charge superposition method; constant aspect ratio; device simulation; interdigitated balanced symmetric SemiSJ structure; interdigitated balanced symmetric semisuperjunction structure; numerical calculation; semisuperjunction trench MOSFET; specific on-resistance optimization; vertical electric field; Analytical models; Approximation methods; Doping; Ionization; MOSFETs; Numerical models; Optimization; Analytical model; charge imbalance (C.I.); semisuperjunction (SemiSJ); specific on-resistance $(R_{rm on})$;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2242331
