Optimization of Specific on-Resistance of Semisuperjunction Trench MOSFETs with Charge Balance

Author

Haimeng Huang ; Xingbi Chen

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

60

Issue

3

fYear

2013

fDate

Mar-13

Firstpage

1195

Lastpage

1201

Abstract

Analytical models of the 2-D electric field distributions of the interdigitated balanced symmetric semisuperjunction (SemiSJ) structure, based on the charge superposition method, are derived. An accurate approximation of the exact analytical solution of the vertical electric field is also proposed and demonstrated by device simulation. The optimization method and its numerical calculation results of the specific on-resistance of the SemiSJ trench MOSFETs with constant aspect ratio (AR) are presented and verified by simulations. The calculation results show that the optimized specific on-resistance of SemiSJ trench MOSFETs can be reduced by more than 12% with AR equaling three, as compared with that of superjunction trench MOSFETs. The effect of charge imbalance on the breakdown voltage (BV) is also investigated. It is found that the maximum BV is achieved at high-Qp condition rather than at charge-balance condition.

Keywords

MOSFET; numerical analysis; optimisation; 2D electric field distributions; SemiSJ trench MOSFET; breakdown voltage; charge balance condition; charge imbalance; charge superposition method; constant aspect ratio; device simulation; interdigitated balanced symmetric SemiSJ structure; interdigitated balanced symmetric semisuperjunction structure; numerical calculation; semisuperjunction trench MOSFET; specific on-resistance optimization; vertical electric field; Analytical models; Approximation methods; Doping; Ionization; MOSFETs; Numerical models; Optimization; Analytical model; charge imbalance (C.I.); semisuperjunction (SemiSJ); specific on-resistance $(R_{rm on})$;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2242331

Filename

6461081