DocumentCode
5346
Title
A Horseshoe Micromachined Resonant Magnetic Field Sensor With High Quality Factor
Author
Weiguan Zhang ; Lee, J.E.-Y.
Author_Institution
Dept. of Electron. Eng., City Univ. of Hong Kong, Hong Kong, China
Volume
34
Issue
10
fYear
2013
fDate
Oct. 2013
Firstpage
1310
Lastpage
1312
Abstract
We report a magnetic field sensor shaped in the form of a horseshoe silicon micromechanical resonator. Through coupling a pair of resonating tines on one end, we are able to achieve a Q of 14 400. This benefits the field sensitivity of the device, which has a linear dependence on the mechanical displacement of the tines that is caused by a Lorentz force. The strength of the magnetic field density is thus inferred from the mechanical displacement. The device has a measured sensitivity of 4.6 mm/(A·T), which agrees well with the proposed analytical model. By scaling the dimensions of the device to a lateral size similar to that of other referenced works based on similar principles, the model predicts a tenfold improvement in sensitivity in comparison. The enhancement is due to the higher Q, achieved by merit of the novel device topology.
Keywords
Q-factor; magnetic field measurement; magnetic sensors; micromechanical resonators; Lorentz force; field sensitivity; horseshoe silicon micromechanical resonator; magnetic field density; magnetic field sensor; mechanical displacement; novel device topology; resonating tines; Current measurement; Lorentz covariance; Magnetic hysteresis; Magnetic resonance; Magnetometers; Q-factor; Sensitivity; High quality factor; horseshoe resonator; magnetic field sensor; microelectromechanical systems (MEMS);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2278031
Filename
6595578
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