Influence of preparation method on structural properties of GeSiO nanosystems

Author

Stavarache, Ionel ; Lepadatu, Ana-Maria ; Teodorescu, Valentin ; Stoica, Tionica ; Pasuk, Iuliana ; Stan, George ; Iancu, Vladimir ; Ciurea, Magdalena Lidia

Author_Institution

Nat. Inst. of Mater. Phys., Magurele, Romania

Volume

01

fYear

2010

fDate

11-13 Oct. 2010

Firstpage

77

Lastpage

80

Abstract

GeSiO nanosystems were obtained using two different preparation methods, sol-gel and magnetron-sputtering. Transmission electron microscopy measurements were performed to investigate the films structure. Amorphous and crystalline Ge dots embedded in amorphous silicon dioxide were observed. The Ge concentration in the GeSiO films was by Energy-dispersive X-ray spectroscopy.

Keywords

amorphous state; elemental semiconductors; germanium; nanofabrication; nanostructured materials; semiconductor growth; semiconductor quantum dots; silicon compounds; sol-gel processing; sputter deposition; thin films; transmission electron microscopy; Ge-SiO; amorphous dots; amorphous silicon dioxide; crystalline dots; energy-dispersive X-ray spectroscopy; film structure; films; magnetron-sputtering; nanosystems; sol-gel; structural properties; transmission electron microscopy; Amorphous magnetic materials; Annealing; Films; Nanocrystals; Silicon; Sputtering; Substrates; Dots; TEM; magnetron sputtering; sol-gel;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2010 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-5783-0

Type

conf

DOI

10.1109/SMICND.2010.5650255

Filename

5650255