An Advanced Double SOI CMOS Pixel Detector Termination With Trench Interspace

Author

Hai-Fan Hu ; Ying Wang ; Jie Chen ; Jia-Tong Wei

Author_Institution

Coll. of Inf. & Commun. Eng., Harbin Eng. Univ., Harbin, China

Volume

15

Issue

7

fYear

2015

fDate

Jul-15

Firstpage

3687

Lastpage

3691

Abstract

In this paper, an advanced double SOI CMOS pixel detector termination with trench interspace is investigated. The proposed termination, where horizontal structure is replaced by the vertical structure, leads to an optimal distribution of electric fields and improves the breakdown voltage. Two-dimensional and three-dimensional physical level simulation results show that the termination presents superior breakdown and charge collection characteristics compared with the conventional termination structure even under irradiation. In addition, the impact of trench interspace dimension and oxide plug structure on the breakdown voltage of pixel detector have been studied.

Keywords

CMOS image sensors; electric breakdown; electric fields; isolation technology; silicon-on-insulator; 2D physical level simulation; 3D physical level simulation; Si; advanced double SOI CMOS pixel detector termination; breakdown voltage; optimal electric field distribution; oxide plug structure; trench interspace; CMOS integrated circuits; Detectors; Electric fields; Electric potential; Plugs; Silicon; SOI CMOS; detector; pixel; radiation; radiation pixel; termination;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2015.2396900

Filename

7031853