Title :
InAs/GaAs Quantum Dot Lasers on Silicon-on-Insulator Substrates by Metal-Stripe Wafer Bonding
Author :
Yuan-Hsuan Jhang ; Tanabe, Katsuaki ; Iwamoto, Satoshi ; Arakawa, Yasuhiko
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
Abstract :
InAs/GaAs quantum dot (QD) lasers on silicon-on-insulator substrates with Si rib structures are fabricated by metal-stripe wafer bonding, where the metal strips work not only as the bonding layer but also as electrodes. Our Fabry-Pérot lasers operate with a threshold current density of 520 A · cm-2 for the broad-area laser, and a threshold current of 110 mA for the ridge laser. The bonded lasers exhibit an InAs QD ground-state lasing at 1.3 μm at room temperature.
Keywords :
Fabry-Perot resonators; III-V semiconductors; gallium arsenide; ground states; indium compounds; integrated optics; laser beams; optical fabrication; quantum dot lasers; silicon-on-insulator; wafer bonding; Fabry-Pérot lasers; InAs QD ground-state lasing; InAs-GaAs; InAs/GaAs quantum dot lasers; Si; Si rib structures; bonding layer; broad-area laser; current 110 mA; electrodes; metal strips; metal-stripe wafer bonding; ridge laser; silicon-on-insulator substrates; temperature 293 K to 298 K; threshold current density; wavelength 1.3 mum; Bonding; Gallium arsenide; Metals; Quantum dot lasers; Silicon; Substrates; Wafer bonding; photonic integrated circuits; semiconductor quantum dot laser; silicon photonics;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2015.2398465
