Title :
A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect
Author :
Wei Cao ; Jiahao Kang ; Wei Liu ; Banerjee, K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California at Santa Barbara, Santa Barbara, CA, USA
Abstract :
This paper presents an analytical current-voltage model specifically formulated for 2-dimensional (2D) transition metal dichalcogenide (TMD) semiconductor based field-effect transistors (FETs). The model is derived from the fundamentals considering the physics of 2D TMD crystals, and covers all regions of the FET operation (linear, saturation, and subthreshold) under a continuous function. Moreover, three issues of great importance in the emerging 2D FET arena: interface traps, mobility degradation, and inefficient doping have been carefully considered. The compact models are verified against 2-D device simulations as well as experimental results for state-of-the-art top-gated monolayer TMD FETs, and can be easily employed for efficient exploration of circuits based on 2D FETs as well as for evaluation and optimization of 2D TMD-channel FET design and performance.
Keywords :
carrier mobility; field effect transistors; monolayers; semiconductor device models; semiconductor doping; transition metal compounds; 2-dimensional transition metal dichalcogenide; 2D FET arena; 2D TMD crystals; 2D TMD-channel FET; FET operation; analytical current-voltage model; compact current-voltage model; inefficient doping effect; interface traps; mobility degradation; semiconductor based field-effect transistors; top-gated monolayer TMD FET; Analytical models; Crystallization; Field effect transistors; Integrated circuit modeling; Semiconductor device modeling; Semiconductor process modeling; Transistors; Two-dimensional displays; Voltage measurement; 2D field-effect transistor (FET); 2D semiconductors; compact modeling; interface trap; molybdenum disulphide (MoS2); transition metal dichalcogenide (TMD); tungsten diselenide (WSe2);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2365028
