Title :
Parasitics considerations for gate drive of IGBT
Author :
Zhang, Peng ; Wen, Xuhui ; Liu, Jun ; Zhuang, Xingming
Author_Institution :
Inst. of Electr. Eng., Chinese Acad. of Sci., Beijing, China
Abstract :
Parasitics are a major concern in design of IGBT gate driver with both high switching speed and high power handling requirements. This paper presents the parasitics influence on the static and dynamic performance. It is shown that the dominant parasitic inside the module and driver circuit. They cause voltage spike or unbalanced transient current between paralleled IGBTs.
Keywords :
insulated gate bipolar transistors; IGBT; driver circuit; gate drive; parasitics considerations; transient current; Driver circuits; Inductance; Insulated gate bipolar transistors; Logic gates; Resistors; Snubbers; Switches;
Conference_Titel :
Electrical Machines and Systems (ICEMS), 2010 International Conference on
Conference_Location :
Incheon
Print_ISBN :
978-1-4244-7720-3
