DocumentCode
53911
Title
Low-Noise Avalanche Photodiode With Graded Junction in 0.15- 
CMOS Technology
Author
Pancheri, Lucio ; Dalla Betta, Gian-Franco ; Stoppa, David
Author_Institution
Dept. of Ind. Eng., Univ. of Trento, Trento, Italy
Volume
35
Issue
5
fYear
2014
fDate
May-14
Firstpage
566
Lastpage
568
Abstract
This letter presents the experimental characterization and noise modeling of a CMOS avalanche photodiode with pwell/n-iso active junction fabricated in a 0.15-μm standard CMOS process. The device exhibits a remarkably low excess noise factor F = 6 at a gain M = 50 in the blue spectral region, and F = 12 at M = 50 in the near-infrared. Gain and noise characteristics are accurately predicted using Hayat dead-space model applied to a linearly graded junction doping profile.
Keywords
CMOS integrated circuits; avalanche photodiodes; integrated circuit modelling; integrated circuit noise; semiconductor device models; semiconductor doping; semiconductor junctions; Hayat dead-space model; blue spectral region; linearly graded junction doping profile; low-noise avalanche photodiode; near-infrared region; pwell-n-iso active junction; size 0.15 mum; standard CMOS process; Avalanche photodiodes; CMOS integrated circuits; CMOS technology; Junctions; Mathematical model; Noise; Semiconductor device modeling; Avalanche photodiode; CMOS; photodetector; photodetector.;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2014.2312751
Filename
6779651
Link To Document