• DocumentCode
    539351
  • Title

    Hardness of nanocrystalline TiO2 thin films doped with terbium

  • Author

    Wojcieszak, Damian ; Kaczmarek, Danuta ; Domaradzki, Laroslaw ; Prociow, Eugeniusz ; Placido, Frank ; Lapp, Steffen ; Mazur, Michal

  • Author_Institution
    Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Wroclaw, Poland
  • fYear
    2010
  • fDate
    25-27 June 2010
  • Firstpage
    86
  • Lastpage
    88
  • Abstract
    In this work influence of terbium dopant on hardness of nanocrystalline TiO2 thin films have been investigated. Thin films were manufactured by high energy reactive magnetron sputtering process. The structure of TiO2-matrix was modified by doping with 0.4 at. % of Tb. Undoped matrix had directly after deposition TiO2-rutile structure with 8.7 nm crystallites in size, while doping with Tb results in anatase structure with 11.7 nm crystallite sizes. Hardness of undoped nanocrystalline matrix was 14.3 GPa, which is two-times higher as-compared to standard TiO2 coatings. Incorporation of terbium into the matrix results in hardness decrease down to 10.7 GPa, what was directly connected with smaller density of the anatase as-compared to rutile structure.
  • Keywords
    crystallites; hardness; nanofabrication; nanoindentation; nanostructured materials; semiconductor doping; semiconductor growth; semiconductor materials; sputter deposition; terbium; titanium compounds; TiO2:Tb; anatase structure; crystallites; doping; hardness; high energy reactive magnetron sputtering; nanocrystalline thin films; nanoindentation; rutile structure; Argon; Erbium; Frequency modulation; Heating;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Students and Young Scientists Workshop, 2010 IEEE International
  • Conference_Location
    Szklarska Poreba
  • Print_ISBN
    978-1-4244-8324-2
  • Type

    conf

  • DOI
    10.1109/STYSW.2010.5714178
  • Filename
    5714178