DocumentCode
539351
Title
Hardness of nanocrystalline TiO2 thin films doped with terbium
Author
Wojcieszak, Damian ; Kaczmarek, Danuta ; Domaradzki, Laroslaw ; Prociow, Eugeniusz ; Placido, Frank ; Lapp, Steffen ; Mazur, Michal
Author_Institution
Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Wroclaw, Poland
fYear
2010
fDate
25-27 June 2010
Firstpage
86
Lastpage
88
Abstract
In this work influence of terbium dopant on hardness of nanocrystalline TiO2 thin films have been investigated. Thin films were manufactured by high energy reactive magnetron sputtering process. The structure of TiO2-matrix was modified by doping with 0.4 at. % of Tb. Undoped matrix had directly after deposition TiO2-rutile structure with 8.7 nm crystallites in size, while doping with Tb results in anatase structure with 11.7 nm crystallite sizes. Hardness of undoped nanocrystalline matrix was 14.3 GPa, which is two-times higher as-compared to standard TiO2 coatings. Incorporation of terbium into the matrix results in hardness decrease down to 10.7 GPa, what was directly connected with smaller density of the anatase as-compared to rutile structure.
Keywords
crystallites; hardness; nanofabrication; nanoindentation; nanostructured materials; semiconductor doping; semiconductor growth; semiconductor materials; sputter deposition; terbium; titanium compounds; TiO2:Tb; anatase structure; crystallites; doping; hardness; high energy reactive magnetron sputtering; nanocrystalline thin films; nanoindentation; rutile structure; Argon; Erbium; Frequency modulation; Heating;
fLanguage
English
Publisher
ieee
Conference_Titel
Students and Young Scientists Workshop, 2010 IEEE International
Conference_Location
Szklarska Poreba
Print_ISBN
978-1-4244-8324-2
Type
conf
DOI
10.1109/STYSW.2010.5714178
Filename
5714178
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