DocumentCode :
539355
Title :
Electrically testable CMP characterization vehicle for DFM, process transfer, and process development
Author :
Segal, Julie ; Haidinyak, Chris ; Pramme, Stephen ; Nagatani, Go ; Ward, Brandon
Author_Institution :
Spansion, Inc., Sunnyvale, CA, USA
fYear :
2008
fDate :
27-29 Oct. 2008
Firstpage :
333
Lastpage :
336
Abstract :
An electrically testable two-mask characterization vehicle for damascene copper CMP is presented. Using electrical test to extract metal thickness allows for characterization of multiple lots, wafers, and sites across the wafers, enabling both DFM and process development applications. Layout experiments were designed to study the effect of same-layer width and density on metal thickness, as well as previous layer density. Results are presented demonstrating the capability and limitations of using this approach to characterize and model metal thickness variations introduced by the CMP process.
Keywords :
Copper; Density measurement; Electrical resistance measurement; Layout; Resistors; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2008 International Symposium on
Conference_Location :
Tokyo, Japan
ISSN :
1523-553X
Electronic_ISBN :
1523-553X
Type :
conf
Filename :
5714872
Link To Document :
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