• DocumentCode
    539355
  • Title

    Electrically testable CMP characterization vehicle for DFM, process transfer, and process development

  • Author

    Segal, Julie ; Haidinyak, Chris ; Pramme, Stephen ; Nagatani, Go ; Ward, Brandon

  • Author_Institution
    Spansion, Inc., Sunnyvale, CA, USA
  • fYear
    2008
  • fDate
    27-29 Oct. 2008
  • Firstpage
    333
  • Lastpage
    336
  • Abstract
    An electrically testable two-mask characterization vehicle for damascene copper CMP is presented. Using electrical test to extract metal thickness allows for characterization of multiple lots, wafers, and sites across the wafers, enabling both DFM and process development applications. Layout experiments were designed to study the effect of same-layer width and density on metal thickness, as well as previous layer density. Results are presented demonstrating the capability and limitations of using this approach to characterize and model metal thickness variations introduced by the CMP process.
  • Keywords
    Copper; Density measurement; Electrical resistance measurement; Layout; Resistors; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing (ISSM), 2008 International Symposium on
  • Conference_Location
    Tokyo, Japan
  • ISSN
    1523-553X
  • Electronic_ISBN
    1523-553X
  • Type

    conf

  • Filename
    5714872