DocumentCode
539355
Title
Electrically testable CMP characterization vehicle for DFM, process transfer, and process development
Author
Segal, Julie ; Haidinyak, Chris ; Pramme, Stephen ; Nagatani, Go ; Ward, Brandon
Author_Institution
Spansion, Inc., Sunnyvale, CA, USA
fYear
2008
fDate
27-29 Oct. 2008
Firstpage
333
Lastpage
336
Abstract
An electrically testable two-mask characterization vehicle for damascene copper CMP is presented. Using electrical test to extract metal thickness allows for characterization of multiple lots, wafers, and sites across the wafers, enabling both DFM and process development applications. Layout experiments were designed to study the effect of same-layer width and density on metal thickness, as well as previous layer density. Results are presented demonstrating the capability and limitations of using this approach to characterize and model metal thickness variations introduced by the CMP process.
Keywords
Copper; Density measurement; Electrical resistance measurement; Layout; Resistors; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing (ISSM), 2008 International Symposium on
Conference_Location
Tokyo, Japan
ISSN
1523-553X
Electronic_ISBN
1523-553X
Type
conf
Filename
5714872
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