DocumentCode
539367
Title
300mm wafer stain formation by Spin Etching
Author
Sato, Keisuke ; Mashimoto, Satomi ; Watanabe, Masaharu
Author_Institution
Lam Research, Bunkyo-ku, Tokyo, Japan
fYear
2008
fDate
27-29 Oct. 2008
Firstpage
308
Lastpage
310
Abstract
Stain film (Porous Silicon Layer) is formed by Spin Etching at room temperature. It is formed on single side of a wafer. It has a potential an insulation layer.
Keywords
Etching; Films; Image color analysis; Insulation; Oxidation; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing (ISSM), 2008 International Symposium on
Conference_Location
Tokyo, Japan
ISSN
1523-553X
Electronic_ISBN
1523-553X
Type
conf
Filename
5714884
Link To Document