DocumentCode :
539403
Title :
A cost-effective alternative to moisture monitoring in epitaxial silicon processing
Author :
Alfonso, Theodore F. ; Branecky, Cary ; Ayad, Tamir F.
Author_Institution :
ST Microelectronics, Carrollton, TX, USA
fYear :
2008
fDate :
27-29 Oct. 2008
Firstpage :
223
Lastpage :
226
Abstract :
In-line process characterization is an important part of any semiconductor manufacturing operation. In today´s manufacturing environment, process and equipment engineers are often challenged to find cost-effective alternatives to expensive contamination monitoring equipment. In the epitaxial silicon manufacturing process, the periodic monitoring of the oxide etch rate has shown to reveal the presence of atmosphere that would otherwise have required a sophisticated monitoring system. The early indication of atmospheric encroachment through oxide etch rate monitoring has allowed intervention and repair prior to scrap or yield impacting events.
Keywords :
Atmosphere; Epitaxial growth; Inductors; Manufacturing; Monitoring; Process control; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2008 International Symposium on
Conference_Location :
Tokyo, Japan
ISSN :
1523-553X
Electronic_ISBN :
1523-553X
Type :
conf
Filename :
5714924
Link To Document :
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