• DocumentCode
    539412
  • Title

    In-line metrology for the 45 nm and 32 nm nodes

  • Author

    Allgair, John ; Bunday, Benjamin ; Cordes, Aaron ; Lipscomb, Pete ; Godwin, Milt ; Vartanian, Victor ; Bishop, Michael ; Arazi, Doron ; Kim, Kye-Weon

  • Author_Institution
    International SEMATECH Manufacturing Initiative (ISMI)/AMD assignee, Austin, TX, USA
  • fYear
    2008
  • fDate
    27-29 Oct. 2008
  • Firstpage
    65
  • Lastpage
    68
  • Abstract
    Successful in-line metrology is imperative for a fab to achieve profitable production yields. Full functionality and high circuit speed are achieved only through control of defectivity and tight distributions of feature sizes. In-line monitoring of applicable metrics is key to ensuring success and is also used to fine-tune production processes for improved yield and circuit speed. Metrology has now become an inherent part of mission-critical production processes. This article gives a high-level overview of the findings of the ISMI metrology program and details some of the major approaching manufacturing challenges.
  • Keywords
    Image edge detection; Inspection; Manufacturing; Metrology; Semiconductor device measurement; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing (ISSM), 2008 International Symposium on
  • Conference_Location
    Tokyo, Japan
  • ISSN
    1523-553X
  • Electronic_ISBN
    1523-553X
  • Type

    conf

  • Filename
    5714933