DocumentCode
539440
Title
From simulation to characterization - integrated approach for Self Aligned Double Patterning defectivity
Author
Conley, Amiad ; Meshulach, Doron ; Gichon, Guy ; Dolev, Ido ; Perlovitch, Renana ; Landwer, Niv ; Ngai, Chris ; Cai, Man-Ping ; Miao, Liyan
Author_Institution
Applied Materials, 9 Openheimer Street, Rehovot, Israel, 76705
fYear
2008
fDate
27-29 Oct. 2008
Firstpage
11
Lastpage
14
Abstract
SADP (Self Aligned Double Patterning) is one of the major options to be implemented to bridge the lithography resolution gaps for 40 nm half pitch nodes and below. A natural concern for IC manufacturers when developing and/or implementing this kind of module is defectivity control strategy to ensure all defect sources are understood and an appropriate inspection strategy can be implemented to ensure high die yields. In this paper we will share a comprehensive study done to understand & characterize the major defect types in the SADP module developed by the Maydan Technology Center of Applied Materials. The implications of this work in terms of setting an optimized inspection strategy in the module will be discussed.
Keywords
Bridges; Inspection; Mathematical model; Physics; Resists; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing (ISSM), 2008 International Symposium on
Conference_Location
Tokyo, Japan
ISSN
1523-553X
Electronic_ISBN
1523-553X
Type
conf
Filename
5714962
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