• DocumentCode
    539440
  • Title

    From simulation to characterization - integrated approach for Self Aligned Double Patterning defectivity

  • Author

    Conley, Amiad ; Meshulach, Doron ; Gichon, Guy ; Dolev, Ido ; Perlovitch, Renana ; Landwer, Niv ; Ngai, Chris ; Cai, Man-Ping ; Miao, Liyan

  • Author_Institution
    Applied Materials, 9 Openheimer Street, Rehovot, Israel, 76705
  • fYear
    2008
  • fDate
    27-29 Oct. 2008
  • Firstpage
    11
  • Lastpage
    14
  • Abstract
    SADP (Self Aligned Double Patterning) is one of the major options to be implemented to bridge the lithography resolution gaps for 40 nm half pitch nodes and below. A natural concern for IC manufacturers when developing and/or implementing this kind of module is defectivity control strategy to ensure all defect sources are understood and an appropriate inspection strategy can be implemented to ensure high die yields. In this paper we will share a comprehensive study done to understand & characterize the major defect types in the SADP module developed by the Maydan Technology Center of Applied Materials. The implications of this work in terms of setting an optimized inspection strategy in the module will be discussed.
  • Keywords
    Bridges; Inspection; Mathematical model; Physics; Resists; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing (ISSM), 2008 International Symposium on
  • Conference_Location
    Tokyo, Japan
  • ISSN
    1523-553X
  • Electronic_ISBN
    1523-553X
  • Type

    conf

  • Filename
    5714962