DocumentCode :
53952
Title :
High Field Electroluminescence Characteristics of Pr ^{3+} -Doped ZnS/TiO _{2}
Author :
Sana, Prabha ; Verma, Shalini ; Malik, M.M. ; Ramrakhiani, Meera
Author_Institution :
Dept. of Phys., Maulana Azad Nat. Inst. of Technol., Bhopal, India
Volume :
13
Issue :
2
fYear :
2014
fDate :
Mar-14
Firstpage :
254
Lastpage :
260
Abstract :
This paper reports the fabrication, operation, and applications of rare-earth (RE) ion praseodymium (Pr3+)-doped ZnS/TiO2 core-shell nanoparticle-based thin-film electroluminescent (ACTFEL) devices. Pr3+:ZnS/TiO2 ACTFEL devices showed white light emission due to impact excitation of the Pr3+ ions by hot carriers followed by radiative RE relaxation under the high field of alternating current. The preparation of Pr3+:ZnS/TiO2 core-shell nanoparticles was done by the colloidal synthesis method. To observe the effect of the TiO2 shell layer on electroluminescence (EL) brightness and properties of Pr3+:ZnS, three types of molar ratios 1:7:7, 9:5:5, and 1:14:14 of Ti:Zn:S were taken in the synthesis process, and to be employed for these three different thin-film EL devices for high-field EL measurements. Each EL device consists of glass substrate/ITO (indium-tin oxide)/TiO2 coated Pr3+-doped ZnS nanocrystalline emission layer/Al (aluminum). The brightness characteristics of Pr3+:ZnS/TiO2 TFELDs were evaluated as a function of bias and frequency. Brightness-voltage ( B-V) measurements at 600 Hz showed the maximum efficiency of the Pr3+:ZnS/TiO2 EL device at molar ratios 1:14:14 of Ti:Zn:S. To observe the frequency-dependent characteristics, the EL device was tested at various frequencies. The measurements showed the decrease in the threshold voltage of the EL device with increased frequencies. High-field voltage-current (V-I) characteristics also showed the frequency-dependent onset voltage and current density. It showed the minimum turn-on voltage and maximum current density at a higher frequency of 1000 Hz.
Keywords :
II-VI semiconductors; aluminium; brightness; current density; electroluminescence; electroluminescent devices; hot carriers; indium compounds; nanoparticles; praseodymium; thin film devices; tin compounds; titanium compounds; wide band gap semiconductors; zinc compounds; ACTFEL devices; SiO2; SiO2-ITO-ZnS:Pr-TiO2-Al; TFELD; alternating current; brightness-voltage measurements; coated Pr3+-doped nanocrystalline emission layer; colloidal synthesis method; current density; electroluminescence brightness; frequency 1000 Hz; frequency 600 Hz; frequency-dependent onset voltage; glass substrate; high field electroluminescence; high-field voltage-current characteristics; hot carriers; impact excitation; indium-tin oxide; molar ratios; radiative RE relaxation; rare-earth ion praseodymium-doped core-shell nanoparticle-based thin-film electroluminescent devices; threshold voltage; turn-on voltage; voltage density; white light emission; Brightness; Electroluminescence; Ions; Nanocrystals; Phosphors; Core-shell nanostructures; X-ray diffraction (XRD); electroluminescence (EL) devices; photoluminescence; zinc sulphide;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2014.2298914
Filename :
6705674
Link To Document :
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