Gas Sensing Properties of Al-doped ZnO Thick Films Prepared by Sol-Gel Method

Author

Guofeng, Pan ; Ping, He ; Ye, Tian ; Jingai, Qi

Author_Institution

Hebei Univ. of Technol., Tianjin, China

Volume

2

fYear

2011

fDate

6-7 Jan. 2011

Firstpage

284

Lastpage

287

Abstract

Al-doped ZnO thick films were prepared by sol-gel method, then which were annealed respectively at 500°C, 700°C and 900°C. The structure of these samples was studied by XRD and SEM. Moreover, the influence on gas sensing properties of the films, result from different Aluminum-doped concentration and different annealing temperature, were mainly researched. Results showed that after 700°C*3h annealing, 2.9wt% Al-ZnO possessed excellent selectivity to acetone (volume fraction: 4.0×10^-1). The maximal sensitivity of the gas sensor is 7779, the best operating temperature is 162°C, and the response-recovery time was Is.

Keywords

II-VI semiconductors; X-ray diffraction; aluminium; annealing; gas sensors; scanning electron microscopy; semiconductor growth; semiconductor thin films; sol-gel processing; thin film sensors; wide band gap semiconductors; zinc compounds; SEM; XRD; ZnO:Al; acetone; annealing; gas sensing properties; selectivity; sensitivity; sol-gel method; temperature 500 degC to 900 degC; thick films; volume fraction; Annealing; Gas detectors; Gases; Sensitivity; Temperature sensors; Zinc oxide; Al2O3; ZnO; gas sensing property; sensitivity; sol-gel method;

fLanguage

English

Publisher

ieee

Conference_Titel

Measuring Technology and Mechatronics Automation (ICMTMA), 2011 Third International Conference on

Conference_Location

Shangshai

Print_ISBN

978-1-4244-9010-3

Type

conf

DOI

10.1109/ICMTMA.2011.358

Filename

5721176