• DocumentCode
    539811
  • Title

    Preparation and Property Analysis of Hydrophobic Zinc Oxide Films

  • Author

    Li Chen ; Li Min

  • Author_Institution
    Beijing Univ. of Aeronaut. & Astronaut., Beijing, China
  • Volume
    2
  • fYear
    2011
  • fDate
    6-7 Jan. 2011
  • Firstpage
    910
  • Lastpage
    913
  • Abstract
    In this research, zinc oxide films were prepared on glass substrates by hydrothermal synthesis and metal-organic chemical vapor deposition (MOCVD) respectively. A nanostructured layer of flurocarbon compounds with low surface energy was formed on the films by low-temperature dielectric barrier discharge plasma enhanced chemical vapor deposition (DBD-PECVD), in order to enhance the hydrophobicity of the films. Scanning electron microscopy (SEM) and contact angle analyzer were used to characterize the surface morphology, structure and hydrophobicity of these samples. The influence of preparation methods and conditions on the properties of hydrophobic zinc oxide films were discussed based on the experimental data.
  • Keywords
    II-VI semiconductors; MOCVD; contact angle; hydrophobicity; nanofabrication; plasma CVD; scanning electron microscopy; semiconductor growth; semiconductor thin films; surface energy; wide band gap semiconductors; zinc compounds; DBD-PECVD; MOCVD; SEM; SiO2; ZnO; contact angle analyzer; dielectric barrier discharge plasma enhanced chemical vapor deposition; flurocarbon compounds; glass substrates; hydrothermal synthesis; metal-organic chemical vapor deposition; nanostructured layer; property analysis; scanning electron microscopy; surface energy; surface morphology; zinc oxide film hydrophobicity enhancement; Films; Rough surfaces; Substrates; Surface morphology; Surface roughness; Surface treatment; Zinc oxide; DBD-PECVD; MOCVD; hydrophobicity; hydrothermal synthesis; zinc oxide film;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Measuring Technology and Mechatronics Automation (ICMTMA), 2011 Third International Conference on
  • Conference_Location
    Shangshai
  • Print_ISBN
    978-1-4244-9010-3
  • Type

    conf

  • DOI
    10.1109/ICMTMA.2011.510
  • Filename
    5721336