DocumentCode
540442
Title
Robust mm-wave large-signal time-domain FET model
Author
Asadi, S. ; Yagoub, M.C.E.
Author_Institution
Sch. of Inf. Technol. & Eng. (SITE), Univ. of Ottawa, Ottawa, ON, Canada
fYear
2010
fDate
7-10 Dec. 2010
Firstpage
2303
Lastpage
2306
Abstract
In this paper, a robust large-signal time-domain model of multi-finger field effect transistors is presented. It efficiently includes wave propagation effects along the width of each finger and gate feeding line, making it suitable for mm-wave applications. The proposed model was demonstrated through a comparison between measured and simulated data of a 0.2μm pHEMT.
Keywords
antenna feeds; finite difference time-domain analysis; high electron mobility transistors; millimetre wave field effect transistors; millimetre wave propagation; gate feeding line; multifinger field effect transistors; pHEMT; robust large-signal time-domain model; robust mm-wave large-signal time-domain FET model; wave propagation effects; Electrodes; Equations; FETs; Integrated circuit modeling; Mathematical model; Solid modeling; Time domain analysis; Distributed model; FDTD; Nonlinear; Transmission line; pHEMT;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location
Yokohama
Print_ISBN
978-1-4244-7590-2
Electronic_ISBN
978-1-902339-22-2
Type
conf
Filename
5728321
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