• DocumentCode
    540573
  • Title

    A 50-mW, 386 GHz/mm2 wideband amplifier in 0.13-µm CMOS technology

  • Author

    Chen, Hsien-Ku ; Wang, Tao ; Lin, Kuan-Ting ; Chen, Hsiao-Chin ; Lu, Shey-Shi

  • Author_Institution
    Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2010
  • fDate
    7-10 Dec. 2010
  • Firstpage
    774
  • Lastpage
    777
  • Abstract
    A wideband amplifier with low power consumption (50 mW) and small chip size (0.44 mm2) is demonstrated in a 0.13 μm CMOS technology. A power gain of 9.5 dB is measured with a 3 dB bandwidth covering from 0.1 GHz to 57 GHz as well as a gain-bandwidth-product (GBW) of 170 GHz. The proposed wideband amplifier has distinguished itself with the state-of-the-art performance of GBW/Pdiss (3.4 GHz/mW) and GBW/chiparea (386 GHz/mm2), which reveals its ability in accomplishing a wideband amplification with reasonable power and area consumptions.
  • Keywords
    CMOS analogue integrated circuits; amplification; low-power electronics; wideband amplifiers; CMOS technology; frequency 0.1 GHz to 57 GHz; gain 9.5 dB; gain-bandwidth-product; low power consumption; power 50 mW; power gain; size 0.13 mum; wideband amplifier; Bandwidth; Broadband amplifiers; CMOS integrated circuits; CMOS technology; Capacitance; Gain; Inductors; CMOS integrated circuits; DA; GBW; distributed amplifier; matching; millimeter-wave; stacked inductor; wideband amplifier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
  • Conference_Location
    Yokohama
  • Print_ISBN
    978-1-4244-7590-2
  • Electronic_ISBN
    978-1-902339-22-2
  • Type

    conf

  • Filename
    5728455
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=540573