RF Energy Harvesting System at 2.67 and 5.8GHz

Author

Arrawatia, Mahima ; Baghini, Maryam Shojaei ; Kumar, Girish

Author_Institution

Electr. Eng. Dept., Indian Inst. of Technol. Bombay, Mumbai, India

fYear

2010

fDate

7-10 Dec. 2010

Firstpage

900

Lastpage

903

Abstract

An RF energy harvesting system using a gap coupled microstrip antenna, designed and fabricated for 2.67 and 5.8GHz, is presented in this paper. Gain of 8.6dB and bandwidth of 100MHz has been achieved for antenna at 2.67GHz. A gain of 9dB and bandwidth of 690MHz is obtained for antenna at 5.8GHz. A CMOS rectifier topology designed in UMC 180nm CMOS process and working at 2.6 GHz is also presented. This topology works without any external bias circuit. Rectified voltage of 1.04V at 1MΩ load with 5-stage rectifier is achieved. Measured results of rectenna using Schottky diode at 2.67 and 5.8GHz are also presented.

Keywords

CMOS integrated circuits; Schottky diodes; energy harvesting; microstrip antennas; rectennas; CMOS rectifier topology; RF energy harvesting system; Schottky diode; UMC CMOS process; bandwidth 100 MHz; bandwidth 690 MHz; frequency 2.67 GHz; frequency 5.8 GHz; gain 8.6 dB; gain 9 dB; gap coupled microstrip antenna; rectenna; resistance 1 Mohm; size 180 nm; voltage 1.04 V; Energy harvesting; Microstrip antennas; Radio frequency; Rectifiers; Schottky diodes; Transistors; CMOS rectifier; RF energy harvesting; microstrip antenna;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2010 Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-1-4244-7590-2

Electronic_ISBN

978-1-902339-22-2

Type

conf

Filename

5728486