Title :
Cost effective, high performance GaN technology
Author :
Boles, Timothy ; Carlson, Douglas ; Varmazis, Costas ; Barrett, Jason
Author_Institution :
M/A-COM Technol. Solutions, Lowell, MA, USA
Abstract :
Gallium Nitride HEMT transistors are the future solid state technology that is presently advancing the performance of state-of-the-art RF power amplifiers from HF frequencies through low mmW applications. Further developments in the basic HEMT material structure, including the choice of substrate, will continue to push the RF performance, output power, frequency response, and bandwidth; availability; and affordability in the microwave marketplace for this newest semiconductor.
Keywords :
HF amplifiers; III-V semiconductors; frequency response; gallium compounds; millimetre wave amplifiers; power HEMT; power amplifiers; radiofrequency amplifiers; wide band gap semiconductors; GaN; HEMT transistor; HF frequency; RF power amplifier; frequency response; mmW application; solid state technology; Aluminum gallium nitride; Gallium arsenide; Gallium nitride; HEMTs; Performance evaluation; Silicon; Substrates;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2
