Title :
An X-band 50% bandwidth high-power GaN HEMT T/R switch
Author :
Hangai, Masatake ; Komaru, Ryota ; Tarui, Yukinobu ; Kamo, Y. Oshitaka ; Hieda, Morishige ; Nakayama, Masatoshi
Author_Institution :
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan
Abstract :
An X-band high-power T/R switch utilizing GaN HEMT has been developed. The switching circuit employed an asymmetric series-shunt/shunt configuration with bandwidth extension circuits. By using the circuit topology, the switch circuit can achieve high-power and low-loss performance at Tx-mode and low insertion loss at Rx-mode in broad bandwidth. To verify this methodology, we have fabricated a GaN HEMT switch, and the circuit has achieved the power handling capability of 20W and the insertion loss of 1.2dB at Tx-mode, 1.8dB at Rx-mode in 7-12GHz range.
Keywords :
III-V semiconductors; field effect transistor switches; gallium compounds; microwave switches; network topology; GaN; HEMT switch; X-band high-power T/R switch; asymmetric series-shunt configuration; bandwidth extension circuit; circuit topology; frequency 7 GHz to 12 GHz; high-power performance; high-power transmit/receive switch; insertion loss; loss 1.2 dB; loss 1.8 dB; low-loss performance; power 20 W; power handling capability; switching circuit; Gallium nitride; HEMTs; MODFETs; Radio frequency; Receiving antennas; Switches; GaN HEMT; T/R switch; broadband; high-power; series-shunt/shunt configuration;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2
