• DocumentCode
    540930
  • Title

    Insulating IGBT driver with PCB integrated capacitive coupling elements

  • Author

    Zeltner, Stefan

  • Author_Institution
    Fraunhofer IISB, Erlangen, Germany
  • fYear
    2010
  • fDate
    16-18 March 2010
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    In many power electronic applications galvanic isolating IGBT/MOSFET drivers are advantageously used. The main reasons are safety issues, driving high voltage power semiconductors with blocking voltages of typically 600 V or above and avoiding or minimizing unwanted ground current loops. This paper deals with a new method for achieving galvanic isolation in high voltage drivers based on printed circuit board (PCB) integrated capacitive coupling elements. The suggested coupling element consists of a pair of plate capacitors by using copper layers and prepregs of a PCB. First, the influence of the isolation barrier capacitance, which is one of the main important parameters of a galvanic insulating driver, is illustrated by a simple model of the capacitive current loop. As a result it is stated that the coupling capacitance should be lower than 5 pF to achieve high dV/dt levels of at least 100 kV/μs. Taking into account the isolation characteristics of the commonly used FR4 PCB material, an integrated capacitive coupling element can be designed. With 360 μm isolation distance and a plate surface of approximately 8 mm2, a capacitance of about 1 pF is achieved. A comparison of the developed capacitive coupling element with a comparable inductive coupling element (transformer) shows that the former has advantages due to a much lower current consumption and less dependency on parasitic inductances. In order to achieve high isolation voltages on PCBs, wide creepage and clearance distances are required, especially at higher humidity levels. It is advisable to use special layout were the primary and the secondary circuits of the driver are placed on different sides on the PCB by using blind vias. The well known Manchester coding can be applied to use the advantages of phase modulated signals for transmitting the switching signal over the isolation barrier. By transmitting the carrier signal via a second capacitive coupling element, the complexity fo- - r decoding the switching signal is reduced. A half bridge driver was built up to verify the new isolation method. Herewith a bidirectional buck-boost DC/DC converter operating at a DC link voltage of 400 V was successfully controlled. Moreover, measurements with a standardized burst generator have shown, that a fail-safe operation is possible up to high dV/dt levels.
  • Keywords
    DC-DC power convertors; MOSFET; insulated gate bipolar transistors; power electronics; printed circuits; DC link voltage; MOSFET drivers; Manchester coding; PCB integrated capacitive coupling elements; bidirectional buck-boost DC-DC converter; creepage; fail-safe operation; galvanic isolation; high voltage drivers; humidity levels; inductive coupling element; insulating IGBT driver; isolation barrier capacitance; power electronic applications; printed circuit board; second capacitive coupling element; Capacitance; Capacitors; Couplings; Driver circuits; Logic gates; Transient analysis; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Power Electronics Systems (CIPS), 2010 6th International Conference on
  • Conference_Location
    Nuremberg
  • Print_ISBN
    978-1-61284-814-3
  • Electronic_ISBN
    978-3-8007-3212-8
  • Type

    conf

  • Filename
    5730642