• DocumentCode
    540936
  • Title

    Power module with additional low inductive current path

  • Author

    Frisch, Michael ; Erno, Temesi

  • Author_Institution
    Vincotech GmbH, Unterhaching, Germany
  • fYear
    2010
  • fDate
    16-18 March 2010
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Parasitic inductances are a major problem with power modules, in particular in fast switching applications. The parasitic inductance of the component interconnections causes an overvoltage condition and increases the switchoff losses in the semiconductor. Many initiatives have been investigated to reduce the parasitic inductance in power modules utilizing a complex mechanical construction of overlapping internal bus bars forming the DC path. An alternative to this approach, which is outlined within this writing, is a concept using today´s standard power module construction but providing an additional ultra low inductive path for the transient current.
  • Keywords
    busbars; inductance; insulated gate bipolar transistors; interconnections; modules; overvoltage; power semiconductor switches; busbar; component interconnection; low inductive current path; overvoltage; parasitic inductance; power module; switch-off loss; transient current; Capacitors; Inductance; Insulated gate bipolar transistors; Logic gates; Multichip modules; Switches; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Power Electronics Systems (CIPS), 2010 6th International Conference on
  • Conference_Location
    Nuremberg
  • Print_ISBN
    978-1-61284-814-3
  • Type

    conf

  • Filename
    5730649