DocumentCode
540936
Title
Power module with additional low inductive current path
Author
Frisch, Michael ; Erno, Temesi
Author_Institution
Vincotech GmbH, Unterhaching, Germany
fYear
2010
fDate
16-18 March 2010
Firstpage
1
Lastpage
6
Abstract
Parasitic inductances are a major problem with power modules, in particular in fast switching applications. The parasitic inductance of the component interconnections causes an overvoltage condition and increases the switchoff losses in the semiconductor. Many initiatives have been investigated to reduce the parasitic inductance in power modules utilizing a complex mechanical construction of overlapping internal bus bars forming the DC path. An alternative to this approach, which is outlined within this writing, is a concept using today´s standard power module construction but providing an additional ultra low inductive path for the transient current.
Keywords
busbars; inductance; insulated gate bipolar transistors; interconnections; modules; overvoltage; power semiconductor switches; busbar; component interconnection; low inductive current path; overvoltage; parasitic inductance; power module; switch-off loss; transient current; Capacitors; Inductance; Insulated gate bipolar transistors; Logic gates; Multichip modules; Switches; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Power Electronics Systems (CIPS), 2010 6th International Conference on
Conference_Location
Nuremberg
Print_ISBN
978-1-61284-814-3
Type
conf
Filename
5730649
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