Higher Intensity SiAvLEDs in an RF Bipolar Process Through Carrier Energy and Carrier Momentum Engineering

Author

Snyman, Lukas W. ; Kaikai Xu ; Polleux, Jean-Luc ; Ogudo, Kingsley A. ; Viana, Carlos

Author_Institution

Dept. of Electr. Eng., Univ. of South Africa (UNISA), Pretoria, South Africa

Volume

51

Issue

7

fYear

2015

fDate

Jul-15

Firstpage

1

Lastpage

10

Abstract

Carrier energy and momentum engineering design concepts have been utilized to realize higher intensity, up to 200 nW.μm -2 in p+nn+ silicon avalanche-based LEDs in a silicon 0.35-μm RF bipolar process. The spectral range is from 600- to 850-nm wavelength region. Best performance are up to 600-nW vertical emission in a 3-μm square active area at 10 V and 1 mA (200 nW.um-2). The achieved emitted optical intensity is about 100 fold better as compared with other published work for nearest related devices. In particular, evidence has been obtained that light emission in silicon are strongly related to scattering mechanisms in a high density n+ dopant matrix of phosphorous atoms in silicon that has been exposed to successive thermal cycles, as well on the optimization of the carrier energy and momentum distributions during such interactions.

Keywords

CMOS integrated circuits; avalanche photodiodes; integrated optics; light emitting diodes; light scattering; optical design techniques; phosphorus; silicon; carrier energy; carrier momentum engineering; current 1 mA; high density n+ dopant matrix; higher intensity SiAvLED; light emission; momentum distributions; momentum engineering design concepts; optical intensity; p+nn+ silicon avalanche-based LED; phosphorous atom in silicon; power 600 nW; scattering mechanism; silicon RF bipolar process; size 3 mum; thermal cycles; voltage 10 V; wavelength 600 nm to 850 nm; Charge carrier processes; Crystals; Ionization; Junctions; Lattices; Scattering; Silicon; CMOS integrated circuit technology; Si LEDs; Silicon photonics; light emitting devices; optical communication; optical interconnects; sensors;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2015.2427036

Filename

7102677