MOS-Gated GTO: A new functionally integrated device suitable for high voltage power applications

Author

Ronsisvalle, C. ; Enea, V. ; Abbate, C. ; Busatto, G. ; Sanseverino, A.

Author_Institution

ST Microelectron., Catania, Italy

fYear

2010

fDate

16-18 March 2010

Firstpage

1

Lastpage

5

Abstract

The aim of this paper is to present the performances of the fully integrated MOS-Gated GTO: a new power device well suited to be applied in the field of high blocking voltages. We start from the characteristics of a fabricated 1.2kV device used to tune the simulator, and we extend the analysis up to 4.5kV blocking voltage. Simulation results are used to understand in detail the physical operations of the device at high values of the blocking voltage and how they compare to the homologous IGBTs. The effects of the lifetime variation are also presented and the trade-off between static and dynamic performances are discussed in detail.

Keywords

MIS devices; power semiconductor devices; thyristors; fully integrated MOS-gated GTO; functionally integrated device; high blocking voltages; high voltage power applications; power device; voltage 1.2 kV; Anodes; Insulated gate bipolar transistors; Logic gates; MOSFET circuits; Performance evaluation; Switches; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Power Electronics Systems (CIPS), 2010 6th International Conference on

Conference_Location

Nuremberg

Print_ISBN

978-1-61284-814-3

Type

conf

Filename

5730677