Title :
Evaluation of commercial SOI driver performances while operated in extreme conditions (150°C-200°C)
Author :
Falahi, K.E. ; Allard, B. ; Tournier, D. ; Bergogne, D.
Author_Institution :
Ampere-Lab., Villeurbanne, France
Abstract :
This paper presents the experimental characterization of commercial SOI MOSFET drivers from room temperature to 200°C and beyond. Parameters such as current amplitude, delay time, rise time and fall time of the output waveforms of the drivers are monitored. The test results will be discussed, and will help produce the specifications of an integrated SOI-based driver with the necessary functionality to drive an inverter up to 220°C ambient temperature.
Keywords :
MOSFET; driver circuits; silicon-on-insulator; commercial SOI MOSFET driver performances; current amplitude; delay time; fall time; rise time; temperature 150 degC to 200 degC; temperature 293 K to 298 K; Driver circuits; Inverters; JFETs; Logic gates; Silicon carbide; Temperature measurement; Voltage control;
Conference_Titel :
Integrated Power Electronics Systems (CIPS), 2010 6th International Conference on
Conference_Location :
Nuremberg
Print_ISBN :
978-1-61284-814-3
