A low power CMOS LNA for 2.45-GHz band IEEE 802.15.4 standard in 0.18-μm technology

Author

Alavi-Rad, Hosein ; Cheraghi, Goodarz ; Ziabakhsh, Soheil

Author_Institution

Langaroud Branch, Dept. of Electr. Eng., Islamic Azad Univ., Langaroud, Iran

fYear

2010

fDate

23-25 Nov. 2010

Firstpage

78

Lastpage

81

Abstract

In this paper, we propose a design methodology for a low-power CMOS LNA consisting of a common-gate stage with modified input matching circuitry and inductive inter-stage architecture for 2450-MHz Band IEEE 802.15.4/ZigBee standard. This configuration provides better input matching, lower noise figure and further reverse isolation which is vital in LNA design. Simulation results show a gain of 16.85 dB, a noise figure of 1.24 dB, an IIP3 of 12.6 dBm and -21.22 dB input matching (S11) for the LNA. The circuit operates at the supply voltage of 1.8 V and power dissipation of 4 mW.

Keywords

CMOS analogue integrated circuits; Zigbee; low noise amplifiers; IEEE 802.15.4 standard; ZigBee standard; common-gate stage; frequency 2.45 GHz; gain 16.85 dB; inductive inter-stage architecture; low noise amplifier; low power CMOS LNA; modified input matching circuitry; noise figure 1.24 dB; power 4 mW; size 0.18 mum; voltage 1.8 V; CMOS integrated circuits; CMOS technology; Impedance matching; Inductors; Logic gates; Noise; Noise figure; Conversion Gain; Input Matching; LNA; Power Dissipation;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems for Communications (ECCSC), 2010 5th European Conference on

Conference_Location

Belgrade

Print_ISBN

978-1-61284-400-8

Type

conf

Filename

5733861