Design of 0.5V, 450μW CMOS LNA using current reuse and forward body bias technique

Author

Kargaran, Ehsan ; Kazemi, Mehdi Mohammad

Author_Institution

Dept. of Electr. Eng., Sadjad Inst. for Higher Educ., Mashhad, Iran

fYear

2010

fDate

23-25 Nov. 2010

Firstpage

93

Lastpage

96

Abstract

An integrated 5 GHz low noise amplifier suitable for ultra low voltage and ultra low power applications is designed and simulated in a standard 0.18μm CMOS technology. By employing the current reuse and forward body bias technique, the proposed LNA can operate at a reduced supply voltage and power consumption. The proposed LNA delivers a power gain (S₂₁) of 12 dB with a noise figure of 3.7 dB, while consuming only 450μW dc power with an ultra low supply voltage of 0. 5 V. The power consumption figure of merit (FOM₁) and the tuning-range figure of merit (FOM₂) are optimal at 26.67 dB/mw and 7.58(v.mw)^-1, respectively.

Keywords

CMOS analogue integrated circuits; low noise amplifiers; low-power electronics; microwave amplifiers; CMOS LNA; current reuse; forward body bias technique; frequency 5 GHz; gain 12 dB; integrated low noise amplifier; noise figure 3.7 dB; power 450 muW; size 0.18 mum; ultra low power application; ultra low voltage application; voltage 0.5 V; CMOS integrated circuits; CMOS technology; Gain; Impedance; Low voltage; Noise; Semiconductor device modeling; Forward body bias; current reuse; low noise amplifier (LNA); ultra low power; ultra low voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems for Communications (ECCSC), 2010 5th European Conference on

Conference_Location

Belgrade

Print_ISBN

978-1-61284-400-8

Type

conf

Filename

5733865