DocumentCode :
54221
Title :
Normally-off Logic Based on Resistive Switches—Part II: Logic Circuits
Author :
Balatti, Simone ; Ambrogio, Stefano ; Ielmini, Daniele
Author_Institution :
Dipt. di Elettron. & Inf., Politec. di Milano, Milan, Italy
Volume :
62
Issue :
6
fYear :
2015
fDate :
Jun-15
Firstpage :
1839
Lastpage :
1847
Abstract :
Logic gates based on the resistive switching random access memory (RRAM) allow normally-off digital computing because of the nonvolatile nature of the RRAM switch [1]. An extremely small area consumption can be achieved because of the 2-terminal structure of the RRAM switch and its capability of 3-D stacking. However, the details of RRAM organization within the array must be thoroughly investigated. This paper discusses the array organization and the select/unselect schemes of the RRAM logic circuits. We demonstrate a 1-bit adder to support the high functionality of RRAM logic. These results support RRAM as a promising technology for nonvolatile logic circuits beyond CMOS.
Keywords :
CMOS logic circuits; CMOS memory circuits; adders; logic design; logic gates; resistive RAM; switching circuits; three-dimensional integrated circuits; 3D stacking; CMOS; RRAM logic circuits; RRAM organization; RRAM switch; adder; array organization; logic gates; nonvolatile logic circuits; normally-off digital computing; normally-off logic; resistive switches; resistive switching random access memory; select-unselect schemes; Arrays; Logic circuits; Logic gates; Optical switches; Transistors; Logic circuits; logic computing; logic gates; resistive switching random access memory (RRAM); resistive switching random access memory (RRAM).;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2423001
Filename :
7102701
Link To Document :
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