DocumentCode
542426
Title
Atomistic process simulation for future generation nanodevices
Author
Marqués, Luis A. ; Pelaz, L. ; Aboy, M. ; López, P. ; Santos, I.
Author_Institution
Dept. de Electr. y Electron., Univ. de Valladolid, Valladolid, Spain
fYear
2011
fDate
8-11 Feb. 2011
Firstpage
1
Lastpage
4
Abstract
We use predictive atomistic simulation techniques to study the front-end processing of nanometric multigate Si devices. We show that, after the amorphizing implants required for doping, annealing produces imperfect regrowth of the device body due to the presence of lateral surfaces. Based on our simulation results, we propose technological alternatives to overcome this defected recrystallization that leads to the degradation of the device performance.
Keywords
nanotechnology; amorphizing implants; annealing; atomistic process simulation; defected recrystallization; doping; front-end processing; future generation nanodevices; imperfect regrowth; lateral surfaces; nanometric multigate Si devices; Annealing; Computational modeling; FinFETs; Implants; Nanowires; Semiconductor process modeling; Silicon; FinFET; Monte Carlo; molecular dynamics; silicon; simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4244-7863-7
Type
conf
DOI
10.1109/SCED.2011.5744248
Filename
5744248
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