Title :
Optical measurements on GaAs(Ti) thin films sputtered on GaAs
Author :
Boronat, A. ; Silvestre, S. ; Castaner, L.
Author_Institution :
Electron. Eng. Dept., UPC, Barcelona, Spain
Abstract :
Some sputtering processes of GaAs(Ti) onto c-GaAs have been carried out in order to obtain thin films as candidates to be intermediate band photovoltaic materials. This work presents the results obtained in the study of the absorptance, from transmittance and reflectance responses, in samples obtained at different conditions of temperature and power during the sputtering deposition.
Keywords :
III-V semiconductors; absorption coefficients; gallium arsenide; infrared spectra; reflectivity; semiconductor thin films; sputter deposition; titanium; ultraviolet spectra; visible spectra; GaAs; GaAs(Ti); absorptance; optical measurement; reflectance; sputtering deposition; thin films; transmittance; Gallium arsenide; Photonics; Reflectivity; Sputtering; Substrates; Temperature measurement; GaAs(Ti); absorptance; sputtering;
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
DOI :
10.1109/SCED.2011.5744250
