DocumentCode
542451
Title
Design of layered nc-Si/Pc structures
Author
Pakhomov, Georgij ; Pryakhin, Dmitrij
Author_Institution
Dept. #140, Russian Acad. of Sci., Nizhny Novgorod, Russia
fYear
2011
fDate
23-25 Feb. 2011
Firstpage
15
Lastpage
17
Abstract
In this report we describe fabrication and (photo-)electrical measurements of thin-film structures consisting of sequentially deposited nanocrystalline silicon (nc-Si) and phthalocyanine semiconductor layers.
Keywords
elemental semiconductors; gold; indium compounds; nanofabrication; nanostructured materials; organic semiconductors; photovoltaic effects; plasma CVD; semiconductor growth; semiconductor thin films; silicon; ITO-Si-Au; nanocrystalline silicon; photoelectrical properties; photovoltaic effect; phthalocyanine semiconductor layers; plasma-enhanced chemical vapor deposition; thin film hybrid structures; Conductivity; Gold; Indium tin oxide; Photovoltaic systems; Silicon; Substrates; PECVD; hybrid structures; photovoltaic effect;
fLanguage
English
Publisher
ieee
Conference_Titel
CAD Systems in Microelectronics (CADSM), 2011 11th International Conference The Experience of Designing and Application of
Conference_Location
Polyana-Svalyava
Print_ISBN
978-1-4577-0042-2
Type
conf
Filename
5744410
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