DocumentCode :
542451
Title :
Design of layered nc-Si/Pc structures
Author :
Pakhomov, Georgij ; Pryakhin, Dmitrij
Author_Institution :
Dept. #140, Russian Acad. of Sci., Nizhny Novgorod, Russia
fYear :
2011
fDate :
23-25 Feb. 2011
Firstpage :
15
Lastpage :
17
Abstract :
In this report we describe fabrication and (photo-)electrical measurements of thin-film structures consisting of sequentially deposited nanocrystalline silicon (nc-Si) and phthalocyanine semiconductor layers.
Keywords :
elemental semiconductors; gold; indium compounds; nanofabrication; nanostructured materials; organic semiconductors; photovoltaic effects; plasma CVD; semiconductor growth; semiconductor thin films; silicon; ITO-Si-Au; nanocrystalline silicon; photoelectrical properties; photovoltaic effect; phthalocyanine semiconductor layers; plasma-enhanced chemical vapor deposition; thin film hybrid structures; Conductivity; Gold; Indium tin oxide; Photovoltaic systems; Silicon; Substrates; PECVD; hybrid structures; photovoltaic effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
CAD Systems in Microelectronics (CADSM), 2011 11th International Conference The Experience of Designing and Application of
Conference_Location :
Polyana-Svalyava
Print_ISBN :
978-1-4577-0042-2
Type :
conf
Filename :
5744410
Link To Document :
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